Structure–conductivity correlation in ferric chloride- doped poly(3-hexylthiophene)
نویسندگان
چکیده
Poly(3-hexylthiophene) (P3HT) matrix has been chemically doped (redox doping) by ferric chloride (FeCl3) with different molar concentrations to get P3HT–FeCl3 charge-transfer complexes. The effect of redox doping on photo-physical, structural, and morphological properties and dc electrical conductivity of P3HT matrices has been examined. The dc conductivity has been measured on films of pristine P3HT and P3HT–FeCl3 charge-transfer complexes in the temperature range 6–300 K. Analysis of dc conductivity data reveals that in the temperature range 40–300 K, the dc conductivity is predominantly governed by Mott’s 3dimensional variable range hopping (3D-VRH); however, below 40 K tunnelling seems to dominate. A slight deviation from 3D-VRH to 1D-VRH is observed with an increase in doping level or precisely with an increase in the extent of P3HT–FeCl3 charge-transfer complexes. We attribute this deviation to the induced expansion in crystallographic lattices as revealed by x-ray diffraction data and formation of discrete conducting domains as observed by atomic force microscope imaging. 3 Author to whom any correspondence should be addressed. New Journal of Physics 8 (2006) 112 PII: S1367-2630(06)24510-5 1367-2630/06/010112+21$30.00 © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft 2 Institute of Physics DEUTSCHE PHYSIKALISCHE GESELLSCHAFT
منابع مشابه
Temperature Dependence of Electrical Properties in Regioregular Poly(3-hexylthiophene) Modulated by Chemical Doping
Electrical conductivity and Seebeck coefficient in regioregular poly(3-hexylthiophene) (RR-P3HT) doped with iodine (I2) have been studied in temperature (T) range from 4.2 K to 300 K and from 77 K to 300 K, respectively. In spite of high doping rate (about 30%), RR-P3HT doped with I2 shows a semiconductive behavior in view of temperature dependence of both electrical conductivity and Seebeck co...
متن کاملEnhanced Electrical Conductivity of Molecularly p-Doped Poly(3-hexylthiophene) through Understanding the Correlation with Solid-State Order
Molecular p-doping of the conjugated polymer poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) is a widely studied model system. Underlying structure-property relationships are poorly understood because processing and doping are often carried out simultaneously. Here, we exploit doping from the vapor phase, which allows us to disentangle the influe...
متن کاملElectrical conductivity and relaxation in poly(3-hexylthiophene)
We studied the complex conductivity of regioregular poly 3-hexylthiophene P3HT in the temperature range between 193–333 K −80 °C to 60 °C and in the frequency range from the direct current dc to 12 GHz. The identified relaxation process was investigated by quasielastic neutron scattering QENS . The dielectric loss peak extracted from complex conductivity corresponds to local molecular motions h...
متن کاملDoping of Conjugated Polythiophenes with Alkyl Silanes
DOI: 10.1002/adfm.200900120 A strong modification of the electronic properties of solution-processable conjugated polythiophenes by self-assembled silane molecules is reported. Upon bulk doping with hydrolized fluoroalkyl trichlorosilane, the electrical conductivity of ultrathin polythiophene films increases by up to six orders of magnitude, reaching record values for polythiophenes: (1.1 0.1) ...
متن کاملA Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 ...
متن کامل